Affiliation:
1. Ohio Aerospace Institute/NASA Glenn Research Center, Cleveland OH 44135.
2. NASA Glenn Research Center, Cleveland OH 44135.
Abstract
Abstract
Along with the development of silicon carbide (SiC) sensors and electronic devices for operation at 500°C, compatible packaging technologies are needed for long term high temperature test and deployment of these sensors and electronic devices. 96% Al2O3 ceramic is a good electrically insulating material with acceptable dielectric constant and low dielectric loss over wide temperature and frequency ranges. This paper presents a packaging system for low power integrated circuits including a prototype 8-I/O chip-level package and printed circuit board (PCB) based on 96% Al2O3 ceramic substrates and Au thick-film metallization for 500°C applications. The details related to designs of packages and PCBs, packaging materials, and specific packaging step recipes including wire - bonding and die-attach, are presented. Some test results of this prototype packaging approach applied to SiC integrated circuits at 500°C are reviewed.
Publisher
IMAPS - International Microelectronics Assembly and Packaging Society
Cited by
3 articles.
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