Properties and Stability of Thick-Film Resistors with Low Processing Temperatures - Effect of Composition and Processing Parameters

Author:

Menot-Vionnet Sonia1,Maeder Thomas1,Grimaldi Claudio1,Jacq Caroline1,Ryser Peter1

Affiliation:

1. Laboratoire de Production Microtechnique, Ecole Polytechnique Fédérale de Lausanne$, BM – Station 17, CH-1015 Lausanne, Switzerland, Ph: +41 21 693 58 23; Fax: +41 21 693 38 91, Email:thomas.maeder@epfl.ch

Abstract

In this work, the properties (sheet-resistance, temperature coefficient and piezoresistance / gauge factor) and stability of thick-film resistors with low firing temperatures (525…650°C) are studied. To this end, two low-melting lead borosilicate glass compositions have been chosen, together with RuO2 as conductive filler. The effect on the properties and stability of composition and firing temperature is studied. The stability of the materials is quantified during high-temperature storage (annealing) at 250°C. These results show that reasonable resistive and piezoresistive properties, as well as stability, can be obtained even using lower processing temperatures compatible with deposition onto steel, titanium, aluminum and glass substrates.

Publisher

IMAPS - International Microelectronics Assembly and Packaging Society

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Electronic, Optical and Magnetic Materials

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