The dependence of the energy density states on the substitution of chemical elements in the Se6Te4-xSbx thin film

Abstract

The energy density state are the powerful factor for evaluate the validity of a material in any application. This research focused on examining the electrical properties of the Se6Te4- xSbx glass semiconductor with x=1, 2 and 3, using the thermal evaporation technique. D.C electrical conductivity was used by determine the current, voltage and temperatures, where the electrical conductivity was studied as a function of temperature and the mechanical electrical conduction were determined in the different conduction regions (the extended and localized area and at the Fermi level). In addition, the density of the energy states in these regions is calculated using the mathematical equations. The constants of energy density states are determined, namely the electron hopping distance, the width of the tails, and pre - exponential factor. The densities of the energetic states (extended N (Eext), localize N (Eloc) and at the Fermi states N (Ef) will be calculated in each of the regions. Moreover, the effect of partial substitution of Se with antimony on energy states and degree of randomness, results observed that the energy densities changing with an increase antimony Sb concentration.