ELECTRICAL CHARACTERIZATION OF NANOCRYSTALLINE ZINC OXIDE/ POURS SILICON HETEROJUNCTION FOR SOLAR CELLS

Abstract

Nanocrystalline Zinc Oxide (ZnO) were deposited at three different temperature (250, 300 and 350 ºC) using chemical spray pyrolysis technique (CSPT) on glass and p-type porous silicon as a substrates separately. The pours silicon was prepared by using an electrochemical etching process under a density of 40 mA/cm2 for 10 minutes. Surface morphology results using atomic force microscopy (AFM) showed that the prepared films nanocrystalline structures, homogeneous surfaces with small small roughness and covering all the surface of the substrate. The results which deduced from optical properties shows that the films have high transmittance with low absorption in the visible region. The optical energy gap values were (3.75, 3.8 and 3.85 eV) of films prepared at ( 250, 300, 350 ºC) respectivly. The electrical results shows that junctions are abrupt type and values of built in voltage of the prepared junctions 250, 300, 350 ºC were 1.1, 0.7 and 0.5 respectively.