SRIM simulation of hydrogen ions interaction with bismuth oxide nanoparticles doped with rare earth elements

Abstract

Simulation methods have received much attention across various fields in recent years. The rare-earth lutetium tantalate (LuTaO4) doped “Bismuth Oxide (Bi2O3) thin films were deposited onto polymer substrates using a SRIM program.” The SRIM program was used to calculate some physical characteristics of Bi2O3 films at energies between 1.0 MeV and 20 MeV. The “electronic and nuclear stopping powers” of LuTaO4, Bi2O3, C10H8O4, and LuTaO4/ Bi2O3/C10H8O4 samples were investigated. These findings show that rare earth doping may improve the performance of composite materials. The interaction of ion beams with matter can result in a wide variety of phenomena. The deposition of Bi2O3 films doped with LuTaO4 on C10H8O4 led to changes in the “electronic and nuclear stopping powers” and range in the materials. Published data were compared with the results obtained and the calculations parameters were provided.