Author:
ALI A. N. M., ,NASIR E. M.,
Abstract
ZnO)1-X-(CuO)x composite films with different x content (0.2, 0.4, 0.6, and 0.8) were prepared through pulse laser deposition method at room temperatures (RT). The (ZnO)1-X- (CuO)x film was deposited on GaAs substrate to form the (ZnO)1-X-(CuO)x / GaAs heterojunction. The influence of varying x content (0.2, 0.4, 0.6, and 0.8) wt.% on characterization of (ZnO)1-X-(CuO)x /GaAs heterojunction solar cell have been investigated. electrical properties of C-V measurements at two frequencies (100, 200) kHz and I-V measurements under dark and light condition have been studied, C-V measurements for heterojunctions show an increment in built in voltage (Vbi) with increasing x content. I-V measurement for heterojunctions show that the approach of forward current is coincides with mechanism of the recombination- tunneling. The open circuit voltage (Voc), short-circuit current (Isc), and fill factor (F.F) have been studied, The best achieved efficiency was obtained around 5.7% at (x=0.2,) also the value efficiency for (ZnO)1-X-(CuO)x/ GaAs heterojunction decreases with increasing x content for all samples.
Publisher
Virtual Company of Physics
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Structural Biology
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