Author:
Ibrahim R. M., ,Karomi I. B.,Ameen O. F.,Al-Ghamdi M. S., , ,
Abstract
We report a theoretical analysis on the influence of operation temperature on the static and dynamic properties of an InP/InGaAsP semiconductor Laser amplifier (SLA). We use a numerical wideband steady-state model and numerical algorithm, to study the (I-P) curves, gain bandwidth, noise figure, outpout noise power and outpout OSNR in a range between - 20 °C and 100 °C. InP/InGaAsP SLA exhibited a thershold curent as low as 55mA at 100 °C and the characteristic temperature (T0) of the SLA was found to be 142.8 0C, which confirms the high temperature operation of the device. Moreover, the results show that InP/InGaAsP SLA can cover 3dB operating at signal wavelengths between 1.54µm and 1.58µm with gains of up to 25dB at -20 0C. This peak slightly decreases with temperature. Furthermore, a high out power saturation of 7 dB was exhabited at -20 °C and a low noise figure of around 2.8 dB was achieved in the deviece. Finally, our model shows the elegant performance of InGaAsP/InP SLA in the range between -20 °C and 100 °C, which makes it a promising candidate for integrated photonics.
Publisher
Virtual Company of Physics
Subject
Physical and Theoretical Chemistry,Condensed Matter Physics,General Materials Science,Biomedical Engineering,Atomic and Molecular Physics, and Optics,Structural Biology
Reference27 articles.
1. [1] H. Ju, S. Zhang, H. Waardt, E. Tangdiongga, G. D. Khoe, H. J. S. Dorren. J. Opt. Express 13, 942 (2005).
2. [2] U. Masashin, T. Munefumi, I. Ryo, N. Kohsuke, Proc SPIE 5246, 263 (2003).
3. [3] H. Aghajanpour, V. Ahmadi, M. Razaghi. Optics & Laser Technology 41, 654 (2009).
4. [4] M. Asghari, I.H. White, MemberJournal Of Lightwave Technology 15, (1997).
5. [5] F. Wang, Y. Yu, Y. Zhang, X. Zhang, Journal of Lightwave Technology 30, 1632 (2012).