Analysis of a-Si:H/SiGe heterostructure solar cell-Reference-Cited by-同舟云学术

Analysis of a-Si:H/SiGe heterostructure solar cell

Published:2023-03 Issue:2 Volume:19 Page:165-173
ISSN:1584-9953
Container-title:Journal of Ovonic Research
language:
Short-container-title:JOR

Author:

Ayat L., ,Idda A.,

Abstract

In this paper we present the results of the numerical simulation using wx-AMPS1D software of a solar cell based on hydrogenated amorphous silicon (a-Si: H / c-SiGe), the top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell to obtain an efficiency high conversion rate. As the results, remarkable improvements on Voc, Jsc and FF have been achieved with the incorporation of n-c-SiGe layer, we achieved an efficiency of 11.93%.

Publisher

Virtual Company of Physics

Subject

Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials

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