Author:
Mebarki R., ,Moughli H.,Merabti A., ,
Abstract
"In the tandem solar cells based on CGS (ZnO/CdS/CuGaSe2) single solar cells, we have the interface state density of defects between CdS buffer layer and CuGaSe2 absorber layer witch causes undesirable carriers recombination, Gaussian distribution model describe this interfacial recombination witch depending to interface state density. In this work we simulated the effect of the interface state density in the buffer and absorber layer of ZnO/CdS/CuGaSe2 solar cells that is variated from 1014 to 1018 cm-3 on I-V characteristics and efficiency. We used the wxAMPS simulator to get the results."
Publisher
Virtual Company of Physics
Subject
Surfaces, Coatings and Films,Physics and Astronomy (miscellaneous),Electronic, Optical and Magnetic Materials
Reference8 articles.
1. [1] M. Elbar, S. Tobbeche A. Merazga, Effect of Top-Cell CGS Thickness on the Performance of CGS/CIGS Tandem Solar Cell.
2. [2] Sang Ho Song, Eray S. Aydil, Stephen A. Campbell. Metal-oxide broken-gap tunnel junction for copper indium gallium diselenide tandem solar cells. Solar Energy Materials and Solar Cells1 33 (2015) 133-142 ; https://doi.org/10.1016/j.solmat.2014.10.046
3. [3] Y. Liu, Y. Sun, A. Rockett, A New Simulation Software of Solar Cells wxAMPS Solar Energy Materials & Solar Cells 98,124-128 2012 ; https://doi.org/10.1016/j.solmat.2011.10.010
4. [4] S.M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York 1981.
5. [5] S.J. Fonash, A manual for One-Dimensional Device Simulation Program for the Analysis of Microelectronic and Photonic Structures AMPS-1D, The Center for Nanotechnology Education and Utilization, The Pennsylvania State University, University Park, PA 16802.