Ultrasonic spray synthesis, photoelectric properties and photovoltaic performances of chalcogenide CaSnS3

Abstract

Chalcogenide perovskites are promising lead-free, stable absorber materials for solar cells. This work reports the synthesis of orthorhombic phase pure CaSnS3 thin films by facile low temperature sulfurization of solution-processed CaSnO3 oxide precursors. Structural characterization confirms complete anion exchange to produce crystalline CaSnS3 films with vertically aligned rod-like grains. Optical studies show strong visible light absorption with direct bandgap of 1.72 eV, ideal for photovoltaics. Electrical measurements indicate p-type conductivity with hole concentration of 1.2×1017 cm-3 and mobility around 8 cm2V-1s-1 at room temperature. First-principles DFT calculations corroborate the p-type electronic structure. Prototype CaSnS3 solar cells are fabricated with TiO2 electrode, demonstrating power conversion efficiency of 2.5% under AM1.5G, open-circuit voltage of 0.55 V, short circuit current density of 11.5 mA/cm2 and fill factor of 0.62. The cells also exhibit remarkable ambient shelf stability over 6 months. The comprehensive results validate the photovoltaic potential of these earth abundant, sustainable chalcogenide perovskites synthesized via scalable low-cost solution methods. Further interface engineering can enable enhanced efficiencies.