EFFECT OF Sn INCORPORATION ON STRUCTURAL, PHYSICAL AND ELECTRICAL PROPERTIES OF Ge-Se-Sb-Sn THIN FILMS

Abstract

The present work reports the analysis of physical, structural and electrical properties alongwiththeir compositional dependence for (Ge20Se80)90-xSb10Snx (x = 2, 4, 6, 10 at %) chalcogenide glassy system. XRDspectra show the amorphous nature of the prepared samples with the possibility of short-range ordering in the samples. Chemically ordered network model, consistent with (8− N) rule, has been utilizedin estimating various physical parameters which reveals that Ge-Se-Sb-Sn glassy systems are thermally stable glasses. The current transport mechanisms have been investigated as a function of temperature in the temperature range 293 K− 363 K revealing thatthe dc-conduction occurs through an activated process with single activation energy. Meyer-Neldel rule is found to be obeyed. The present study suggests Ge-Se-Sb-Sn glassy system to be an optimal material for utilization in optical devices.