OPTICAL AND ELECTRICAL STUDIES OF DOPED In-Se SYSTEM FOR PHASE-CHANGE MEMORY APPLICATIONS

Abstract

Chalcogenide glasses have gained popularity due to their optical and electrical properties and versatile applications in the field of science and technology. In this manuscript, we describe the preparation of antimony-doped Indium Selenide thin films with different concentrations of antimony. Structure and morphology of the prepared films are studied by X-ray diffraction and field-emission scanning electron microscope. The properties that are studied during this course of work include optical energy band gap, electrical properties, and dielectric measurements.