Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals-Reference-Cited by-同舟云学术

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Admittance and Permittivity in Doped Layered TlGaSe_2 Single Crystals

Published:2014-06 Issue:6 Volume:125 Page:1267-1271
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Dawood S.A.¹,Fedotov A.K.¹,Mammadov T.G.²,Zukowski P.³,Koltunowicz T.N.³,Saad A.M.⁴,Drozdov N.A.¹

Affiliation:

1. Belarusian State University, Independence av. 4, 220030 Minsk, Belarus

2. Institute of Physics of Azerbaijan National Academy of Science, Baku, Azerbaijan

3. Department of Electrical Devices and High Voltages Technologies, Lublin University of Technology Nadbystrzycka 38a, 20-618 Lublin, Poland

4. Al-Balqa Applied University, P.O. Box 4545, Amman 11953, Jordan

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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