Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells-Reference-Cited by-同舟云学术

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Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

Published:2005-02 Issue:2 Volume:107 Page:245-249
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Kundrotas J.¹²,Čerškus A.¹,Ašmontas S.¹,Valušis G.¹²,Sherliker B.³,Halsall M.P.³,Harrison P.⁴,Steer M.J.⁵

Affiliation:

1. Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

2. Vilnius Gediminas Technical University, Saulėtekio al. 11, 10223 Vilnius, Lithuania

3. Department of Physics, UMIST, University of Manchester, Manchester M60 1QD, United Kingdom

4. IMP, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

5. Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JJD, Sheffield, United Kingdom

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phonon sidebands in photoluminescence of beryllium δ-doped GaAs/AlAs multiple quantum wells;SPIE Proceedings;2006-02-19

2. Excitonic and impurity-related optical transitions in Beδ-dopedGaAs∕AlAsmultiple quantum wells: Fractional-dimensional space approach;Physical Review B;2005-12-19

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