Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams-Reference-Cited by-同舟云学术

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Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

Published:2020-02 Issue:2 Volume:137 Page:227-230
ISSN:1898-794X
Container-title:Acta Physica Polonica A
language:
Short-container-title:Acta Phys. Pol. A

Author:

Uedono A.¹,Egger W.²,Koschine T.²,Hugenschmidt C.³,Dickmann M.³,Ishibashi S.⁴

Affiliation:

1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Universität der Bundeswehr München, Institut für Angewandte Physik und Messtechnik, 85577 Neubiberg, Germany

3. Physics Department E21 and Heinz Maier-Leibnitz Zentrum (MLZ), Technische Universität München, 85748 Garching, Germany

4. Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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