Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy-Reference-Cited by-同舟云学术

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Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy

Published:2008-05 Issue:5 Volume:113 Page:1273-1278
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Anwand W.¹,Schumann Th¹,Brauer G.¹,Skorupa W.¹,Xiong S.Z.²,Wu C.Y.³,Gebel T.⁴

Affiliation:

1. Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany

2. Institute of Photoelectronics, Nankai University, Tianjin 300071, China

3. Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

4. FHR Anlagenbau GmbH, 01458 Ottendorf-Okrilla, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Construction of a Slow Positron Beam for Solid and Surface Investigations;Defect and Diffusion Forum;2012-09

2. Millisecond annealing for advanced doping of dirty-silicon solar cells;Journal of Applied Physics;2012-06-15

3. Solar Cell Emitters Fabricated by Flash Lamp Millisecond Annealing;Acta Physica Polonica A;2011-07

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