Simulations of Si and SiO2Etching in SF6+O2Plasma
Author:
Affiliation:
1. Department of Physics, Kaunas University of Technology, 73 K. Donelaičio St., LT-44029 Kaunas, Lithuania
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface wettability control and fluorination modeling of amorphous carbon films fluorinated with CF4 plasma;Applied Surface Science;2023-10
2. Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures;Russian Microelectronics;2023-08
3. On Relationships between Plasma Chemistry and Surface Reaction Kinetics Providing the Etching of Silicon in CF4, CHF3, and C4F8 Gases Mixed with Oxygen;Materials;2023-07-17
4. Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures;Микроэлектроника;2023-07-01
5. Comparative study of CF 4 + O 2 and C 6 F 12 O + O 2 plasmas for reactive‐ion etching applications;Plasma Processes and Polymers;2021-11
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