Ultrafast Phenomena in Freestanding LT-GaAs Devices-Reference-Cited by-同舟云学术

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Ultrafast Phenomena in Freestanding LT-GaAs Devices

Published:2005-01 Issue:1 Volume:107 Page:109-117
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Marso M.¹,Mikulics M.¹²,Adam R.¹,Wu S.³,Zheng X.³,Camara I.²,Siebe F.²,Förster A.¹,Güsten R.²,Kordoš P.¹,Sobolewski R.³

Affiliation:

1. Institute of Thin Films and Interfaces, Research Center Jülich, 52425 Jülich, Germany

2. Max-Planck-Institut für Radioastronomie, 53121 Bonn, Germany

3. Department of Electrical and Computer Engineering and Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14627-0231, USA

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nano-LED driven phase change evolution of layered chalcogenides for Raman spectroscopy investigations;FlatChem;2022-11

2. Fully photon operated transmistor / all-optical switch based on a layered Ge1Sb2Te4 phase change medium;FlatChem;2020-09

3. Subpicosecond electron-hole recombination time and terahertz-bandwidth photoresponse in freestanding GaAs epitaxial mesoscopic structures;Applied Physics Letters;2012-07-16

4. Finite element simulation of metal–semiconductor–metal photodetector;Solid-State Electronics;2009-10

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