Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio-Reference-Cited by-同舟云学术

Temperature Dependence of Photoluminescence from Epitaxial InGaAs/GaAs Quantum Dots with High Lateral Aspect Ratio

Published:2011-11 Issue:5 Volume:120 Page:883-887
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Musiał A.¹,Sęk G.¹,Maryński A.¹,Podemski P.¹,Misiewicz J.¹,Löffler A.²,Höfling S.²,Reitzenstein S.²,Reithmaier J.P.²³,Forchel A.²

Affiliation:

1. Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

2. Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex, Material Systems (RCCM), Am Hubland, D-97074 Würzburg, Germany

3. Institute of Nanostructure Technologies and Analytics, Technische Physik, Universität Kassel, Kassel, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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