Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies-Reference-Cited by-同舟云学术

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Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies

Published:2003-06 Issue:6 Volume:103 Page:573-578
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Chwalisz B.¹,Wysmołek A.¹,Bożek R.¹,Korona K.P.¹,Stępniewski R.¹,Knap W.²,Pakuła K.¹,Baranowski J.M.¹,Grandjean N.³,Massies J.³,Prystawko P.⁴,Grzegory I.⁴

Affiliation:

1. Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland

2. Groupe d'Etude des Semiconducteurs, CNRS-UMR5650 Université Montpellier 2, Montpellier, France

3. CNRS - CRHEA, rue Bernard Grégory, Valbonne-Sophia-Antipolis, France

4. High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers;Acta Physica Polonica A;2007-08

2. Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells;physica status solidi (c);2005-02

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