Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer-Reference-Cited by-同舟云学术

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Fourier-Transformed Temperature-Dependent Photoluminescence of GaSb-Based Resonant Tunneling Structure with GaInAsSb Absorption Layer

Published:2018-10 Issue:4 Volume:134 Page:962-965
ISSN:1898-794X
Container-title:Acta Physica Polonica A
language:
Short-container-title:Acta Phys. Pol. A

Author:

Dyksik M.¹,Motyka M.¹,Kurka M.¹,Misiewicz J.¹,Pfenning A.²,Hartmann F.²,Weih R.²,Worschech L.²,Höfling S.²³,Sęk G.¹

Affiliation:

1. Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, Wrocław 50-370, Poland

2. Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074, Würzburg, Germany

3. SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, KY16 9SS, United Kingdom

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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