Microstructural Analysis and Transport Properties of RuO2-Based Thick Film Resistors-Reference-Cited by-同舟云学术

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Microstructural Analysis and Transport Properties of RuO2-Based Thick Film Resistors

Published:2008-01 Issue:1 Volume:113 Page:625-628
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Gabáni S.¹,Flachbart K.¹,Pavlík V.¹,Pietriková A.²,Gabániová M.³

Affiliation:

1. Institute of Experimental Physics, Slovak Academy of Sciences, Watsonova 47, 04001 Košice, Slovakia

2. Department of Technologies in Electronics, Faculty of Electrical Engineering and Informatics, TU Košice, 04200 Košice, Slovakia

3. Research and Development, U.S. Steel Košice, s.r.o., 04454 Košice, Slovakia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositions, Physical and Chemical Properties, and Compatibility of Lead–Boron–Silicate Glass with Ruthenium(IV) Oxide Compounds;Glass Physics and Chemistry;2021-03

2. The use of RuO2 resistors as broadband low-temperature radiation sensors;Instruments and Experimental Techniques;2016-07

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