Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions-Reference-Cited by-同舟云学术

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Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

Published:2011-05 Issue:5 Volume:119 Page:606-608
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Lewińska S.¹,Gryglas-Borysiewicz M.¹,Przybytek J.¹,Baj M.¹,Jouault B.²³,Gennser U.⁴,Ouerghi A.⁴

Affiliation:

1. Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

2. Groupe d'Etude des Semiconducteurs, Université Montpellier 2, Montpellier, France

3. CNRS, UMR 5650, cc074, pl. Eugène Bataillon, 34095 Montpellier Cedex 5, France

4. Laboratoire de Photonique et Nanostructures, CNRS, Marcoussis, France

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum resonant tunneling in semiconductor double-barrier structure;Optik;2018-10

2. Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements;Acta Physica Polonica A;2011-05

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