Raman Characterisation of Cd1-xZnx Te Thick Polycrystalline Films Obtained by the Close-Spaced Sublimation
Author:
Affiliation:
1. Sumy State University, 2, Rymsky Korsakov Str., 40007 Sumy, Ukraine
2. Chernivtsi National University, 2, Kotsiubynskogo Str., Chernivtsi, Ukraine
3. Riga Technical University, 3 Paula Valdena Str., LV-1048, Riga, Latvia
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. The Growth Pits Filling Mechanism of CdZnTe Epitaxial Film Prepared by Close-Spaced Sublimation Based on the First-Principles Calculation;Journal of Crystal Growth;2023-09
2. Morphology-property relationships of CdZnTe films prepared via radio frequency magnetron sputtering;Thin Solid Films;2023-03
3. Raman study of Cd1−xZnxTe phonons and phonon–polaritons—Experiment and ab initio calculations;Journal of Applied Physics;2023-02-08
4. Resistance characteristics of CdZnTe films with structure of Cu/CdZnTe/ITO and Cu/CdZnTe/Cu;Applied Physics A;2022-01-13
5. Combinatorial study of the structural, optical, and electrical properties of low temperature deposited Cd1-Zn Te (0 ≤ x ≤ 1) thin films by MOCVD;Applied Surface Science;2021-02
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