First-Principles Calculation of He-H Interaction in c-Si-Reference-Cited by-同舟云学术

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First-Principles Calculation of He-H Interaction in c-Si

Published:2006-03 Issue:3 Volume:109 Page:353-357
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Gnidenko A.A¹,Zavodinsky V.G¹,Misiuk A.²,Bak-Misiuk J.³

Affiliation:

1. Institute of Materials Science, FEB RAS, Tihookeanskaya, 680042 Khabarovsk, Russia

2. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

3. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ab Initio Study of He Migrations in Fcc Au-Ag Alloys;Acta Physica Polonica A;2016-06

2. Effect of Annealing on Microstructure in (Doped and Undoped) Hydrogenated Amorphous Silicon Films;MRS Proceedings;2014

3. Voids in hydrogenated amorphous silicon materials;Journal of Non-Crystalline Solids;2012-09

4. Isolated Voids in Amorphous Silicon and Related Materials Measured by Effusion of Implanted Helium;MRS Proceedings;2012

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