Depth Profile Analysis of Phosphorus Implanted SiC Structures-Reference-Cited by-同舟云学术

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Depth Profile Analysis of Phosphorus Implanted SiC Structures

Published:2015-11 Issue:5 Volume:128 Page:864-867
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Konarski P.¹,Król K.¹²,Miśnik M.¹,Sochacki M.¹,Szmidt J.²,Turek M.³,Żuk J.³

Affiliation:

1. Institute of Tele- and Radio Technology, Ratuszowa 11, 03-450 Warsaw, Poland

2. Institute of Micro- and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

3. Institute of Physics, Maria Sk\l odowska-Curie University, Lublin, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterizations on the doping of single-crystal silicon carbide;Materials Today Physics;2022-12

2. Phosphorus implantation into 4H-SiC at room and elevated temperature;Semiconductor Science and Technology;2021-04-21

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