Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells
Author:
Affiliation:
1. Laboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications, U.S.T.O.M.B. B.P.1505, El M'nouar, Oran, Algérie
2. Laboratoire LTE Département de Génie Mécanique, E.N.S.E.T B.P.1523, Route d'Es Senia, 31000 Oran, Algérie
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Response of Silicon Heterojunction Solar Cells with Transparent Conductive Oxide Antireflective Coating;Acta Physica Polonica A;2021-01
2. Investigation of the interface defect density at pm-Si:H/c-Si and the surface recombination speeds on silicon heterojunction solar cells;Optik;2020-12
3. Numerical analysis of metal-semiconductor junctions ITO/p-a-Si:H and n-c-Si/Al on silicon heterojunction solar cells;Optik;2020-06
4. Silicon homo-heterojunction solar cells: A promising candidate to realize high performance more stably;AIP Advances;2017-08
5. Influence of Characteristic Energies and Charge Carriers Mobility on the Performance of a HIT Solar Cell;Journal of Nano- and Electronic Physics;2017
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