Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment-Reference-Cited by-同舟云学术

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Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment

Published:2008-08 Issue:2 Volume:114 Page:439-446
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Wieteska K.¹,Misiuk A.²,Prujszczyk M.²,Wierzchowski W.³,Surma B.³,Bąk-Misiuk J.⁴,Romanowski P.⁴,Shalimov A.⁴,Capan I.⁵,Yang D.⁶,Graeff W.⁷

Affiliation:

1. Institute of Atomic Energy, 05-400 Otwock,Świerk, Poland

2. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

3. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

4. Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

5. Materials Physics, Rudjer Boskovic Institute, 10000 Zagreb, Croatia

6. State Key Laboratory of Silicon Materials, Zhenjiang University, Hangzhou 310027, China

7. HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the defects in electron-irradiated Czochralski silicon;Radiation Measurements;2010-03

2. Thermally induced defects in silicon irradiated with fast neutrons;Radiation Physics and Chemistry;2009-10

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