Preparation and Characterization of SiC Thin Films for <sup>3</sup>H<sub>2</sub>O Steam Sensing-Reference-Cited by-同舟云学术

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Preparation and Characterization of SiC Thin Films for ³H₂O Steam Sensing

Published:2024-06 Issue:6 Volume:145 Page:336-346
ISSN:1898-794X
Container-title:Acta Physica Polonica A
language:
Short-container-title:Acta Phys. Pol. A

Author:

Ait Kaci N.¹²,Kaci S.²,Bentoumi K.H.¹,Belaid M.¹,Abdelouahab R.¹,Nechaf A.¹,Lachemet A.³

Affiliation:

1. Nuclear Research Center of Algiers (CRNA), Frantz Fanon Bd, 2 PB 399 RP, 16000, Algiers, Algeria

2. Research Center on Semiconductor Technology for Energetic (CRTSE), Frantz Fanon Bd, 2 PB 140 7M, 16038, Algiers, Algeria

3. University of Science and Technology Houari Boumedian (USTHB), Bab Ezzouar, P.B. 32, 16079, Algiers, Algeria

Publisher

Institute of Physics, Polish Academy of Sciences

Reference39 articles.

1. A.K. Burcu, ACS Appl. Electron. Mater. 4, 4797 (2022)

2. B. Shivananju, H.Y. Hoh, W. Yu, Q. Bao, Electon. Opt. Mater. 1, 379 (2019)

3. M. Ojovan, W. Lee S. Kalmykov, An Introduction to Nuclear Waste, 3rd ed., Elsevier, 2019, p. 145

4. People's Democratic Republic of Algeria, Executive Decree No. 11-125, 2011

5. H. Smith, 1990 International Commission on Radiological Protection, Annals of the ICRP Vol. 21, Oxfordshire, Didcot 1990

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