III-Nitride Nanostructures for Infrared Optoelectronics-Reference-Cited by-同舟云学术

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III-Nitride Nanostructures for Infrared Optoelectronics

Published:2006-09 Issue:3 Volume:110 Page:295-301
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Monroy E.¹,Guillot F.¹,Leconte S.¹,Bellet-Amalric E.¹,Nevou L.²,Doyennette L.²,Tchernycheva M.²,Julien F.H.²,Baumann E.³,Giorgetta F.³,Hofstetter D.³,Dang Le Si⁴

Affiliation:

1. CEA-Grenoble, DRFMC/SP2M/PSC, 17 rue des Martyrs, 38054 Grenoble, France

2. Institut d'Electronique Fondamentale, Université Paris-Sud, 91405 Orsay, France

3. University of Neuchâtel, 2000 Neuchâtel, Switzerland

4. Laboratoire de Spectrométrie Physique, Université Joseph Fourier, 38402 Saint Martin d'Hères, France

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

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3. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy;EPJ Web of Conferences;2013

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