Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal-Reference-Cited by-同舟云学术

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Hydrostatic Pressure Effect on Oxygen Precipitates in Silicon Single Crystal

Published:1991-09 Issue:3 Volume:80 Page:317-320
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Misiuk A.¹,Adamczewska J.¹,Bąk-Misiuk J.²,Härtwig J.³,Morawski A.⁴,Witczak Z.⁴

Affiliation:

1. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warszawa, Poland

2. Institute of Physics, Polish Academy of Sciences, Warszawa, Poland

3. Department of Physics, Jena University, Jena, Germany

4. High Pressure Research Centre, Polish Academy of Sciences, Warszawa, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Effect of Pressure on the Concentration of Thermal Donors in Czochralski Grown Silicon;physica status solidi (b);1996-11-01

2. Uniform Stress Effect on Nucleation of Oxygen Precipitates in Czochralski Grown Silicon;Early Stages of Oxygen Precipitation in Silicon;1996

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