Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots-Reference-Cited by-同舟云学术

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Effect of Retrapping on Thermoluminescence Peak Intensities of Small Amorphous Silicon Quantum Dots

Published:2016-03 Issue:3 Volume:129 Page:362-366
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Debelo N.G.¹²,Dejene F.B.¹,Mal'nev V.N.²,Senbeta T.²,Mesfin B.²,Roro K.³

Affiliation:

1. Private Bag X13, Department of Physics, University of the Free State, QWA-QWA Campus, South Africa

2. Department of Physics, Addis Ababa University, P.O. Box 1176, Addis Ababa, Ethiopia

3. R&D Core (Energy Initiatives), Council for Scientific and Industrial Research, P.O. Box 395, Pretoria, South Africa

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural, optical and thermoluminescence study of annealed zinc aluminate spinel nanophosphor;Journal of Materials Science: Materials in Electronics;2023-11

2. Thermoluminescence of Porous Silicon;Handbook of Porous Silicon;2018

3. Two-Electron Spherical Quantum Dot in a Magnetic Field;Few-Body Systems;2016-07-18

4. Thermoluminescence of Porous Silicon;Handbook of Porous Silicon;2016

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