Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure-Reference-Cited by-同舟云学术

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Fine Structure of Resonant-Tunneling Peak in GaAs/AlAs Double-Barrier Heterostructure

Published:1995-02 Issue:2 Volume:87 Page:377-380
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Vitusevich S.A.¹,Figielski T.¹,Mąkosa A.¹,Wosiński T.¹,Belyaev A.E.²,Konakova R.V.²,Kravchenko L.N.³

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

2. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 252028 Kiev, Ukraine

3. Science and Research Institute of Molecular Electronics, 103460 Moscov, Russia

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum interference of electrons transmitted throughout a double-barrier resonant tunnelling structure under a perpendicular magnetic field;Semiconductor Science and Technology;1997-01-01

2. Magnetically Controlled Interference of Ballistic Electrons Tunnelled throughout the Double-Barrier Resonator;Acta Physica Polonica A;1996-10

3. Single Versus Double Current Bistability in Resonant-Tunnelling Devices;Heterostructure Epitaxy and Devices;1996

4. Influence of Accumulation Layer on Rcsonant Tunneling in Double-Barrier Structures;Acta Physica Polonica A;1995-10

5. Effect of Magnetic Field on Fine Structure of Tunnel Current in Double-Barrier Resonant-Tunneling Devices;Acta Physica Polonica A;1995-10

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