High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions-Reference-Cited by-同舟云学术

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High Temperature Stability of Electrical and Optical Properties of Bulk GaN:Mg Grown by HNPS Method in Different Crystallographic Directions

Published:2016-01 Issue:1a Volume:129 Page:A-126-A-128
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Sadovyi B.¹²,Amilusik M.¹,Staszczak G.¹,Bockowski M.¹,Grzegory I.¹,Porowski S.¹,Konczewicz L.³,Tsybulskyi V.²,Panasyuk M.²,Rudyk V.²,Karbovnyk I.²,Kapustianyk V.²,Litwin-Staszewska E.¹,Piotrzkowski R.¹

Affiliation:

1. Institute of High Pressure Physics, Polish Aacademy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

2. Ivan Franko National University of Lviv, Dragomanova 50, Lviv 79005, Ukraine

3. Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Universit'e de Montpellier, Montpellier, F-France

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamic Calculations of the Fe–Ga–N Melting Diagram in the Context of Gallium Nitride Crystallization under High Temperatures and Pressures;Journal of Superhard Materials;2022-04

2. Influence of crystallization front direction on the Mg-related impurity centers incorporation in bulk GaN:Mg grown by HNPS method;Optical Materials;2016-08

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