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Transformation of AlGaAs/GaAs Interface under Hydrostatic Pressure

  • Published:1996-03 Issue:3 Volume:89 Page:405-409
  • ISSN:0587-4246
  • Container-title:Acta Physica Polonica A
  • language:en
  • Short-container-title:Acta Phys. Pol. A

Author:

Bąk-Misiuk J.1,Domagała J.1,Trela J.1,Leszczyński M.2,Misiuk A.3,Hartwig J.4,Prieur E.4

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

2. High Pressure Research Center, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warszawa, Poland

3. Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

4. European Synchrotron Radiation Facility, BP220, 38043 Grenoble Cedex, France

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Variation of strain in granular GaAs:MnAs layers;Crystallography Reports;2013-12

2. Pressure-induced defect structure changes in thin AlGaAs layers;Journal of Alloys and Compounds;2004-01

3. X-ray Study of Strain Relaxation in Heteroepitaxial Layers of Semiconductors Annealed under High Hydrostatic Pressure;Frontiers of High Pressure Research II: Application of High Pressure to Low-Dimensional Novel Electronic Materials;2001

4. Effect of stress on interface transformation in thin semiconducting layers;Thin Solid Films;2000-12

5. Influence of high hydrostatic pressure–high temperature treatment on defect structure of AlGaAs layers;Journal of Alloys and Compounds;1999-05
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