Defect Structure of High-Temperature-Grown GaMnSb/GaSb

Author:

Romanowski P.1,Bak-Misiuk J.1,Dynowska E.1,Domagala J.Z.1,Sadowski J.12,Wojciechowski T.1,Barcz A.13,Jakiela R.1,Caliebe W.4

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, PL-02-668 Warsaw, Poland

2. Lund University, MAX-lab, Ole Romers vag 1, SE-22363 Lund, Sweden

3. Institute of Electron Technology, al. Lotników 32/46, PL-02-668 Warsaw, Poland

4. HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg, Germany

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Dislocation Magnetism of the GaSb〈Mn〉 Semiconductor;Inorganic Materials;2019-09

2. Structure and Chemical Composition of Manganese-Doped GaSb Dislocations;Russian Journal of Inorganic Chemistry;2018-09

3. Synthesis and magnetic properties of solid solutions In1–x Ga x Sb〈Mn〉;Russian Journal of Inorganic Chemistry;2017-01

4. Magnetic Semiconductors;Handbook of Crystal Growth;2015

5. Ferromagnetism of GaSb (2% Mn) alloy;Russian Journal of Inorganic Chemistry;2014-10-23

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