Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed-Reference-Cited by-同舟云学术

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Fine Diffraction Effects in Si Single Crystals Implanted with Fast Ar Ions and Annealed

Published:2002-05 Issue:5 Volume:101 Page:743-750
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Żymierska D.¹,Godwod K.¹,Adamczewska J.¹,Auleytner J.¹,Choiński J.²,Regiński K.³

Affiliation:

1. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

2. Heavy Ion Laboratory of Warsaw University, Pasteura 5a, 02-093 Warsaw, Poland

3. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synchrotron X-ray diffraction studies of silicon implanted with high-energy Ar ions after thermal annealing;Journal of Alloys and Compounds;2004-11

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