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Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure

  • Published:2002-05 Issue:5 Volume:101 Page:719-727
  • ISSN:0587-4246
  • Container-title:Acta Physica Polonica A
  • language:en
  • Short-container-title:Acta Phys. Pol. A

Author:

Misiuk A.1,Bąk-Misiuk J.2,Bryja L.3,Kątcki J.1,Ratajczak J.1,Jun J.4,Surma B.5

Affiliation:

1. Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

2. Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

3. Wrocław University of Technology, Wyb. Wyspiańskiego 27, 53-370 Wrocław, Poland

4. High Pressure Research Centre, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

5. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of high hydrostatic pressure during annealing on silicon implanted with oxygen;Journal of Materials Science: Materials in Electronics;2003

2. Effect of High Temperature—Pressure on Buried Silicon Dioxide in Simox and Soi Structures;Radiation Effects and Defects in Solids;2003-01

3. Optically Active Silicon Nanostructures Prepared from Implanted Si by Annealing at High Hydrostatic Pressure;Nanostructures: Synthesis, Functional Properties and Applications;2003

4. Effect of high temperature - pressure on SOI structure;Crystal Engineering;2002-09

5. Impact of Hydrostatic Pressure during Annealing of Si:O on Creation of Simox - Like Structures;Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
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