Deterministic Periodical and Quasiperiodical Surfaces of III-V Compounds: Preparation, Investigations and Applications
Author:
Affiliation:
1. Institute of Semiconductor Physics, National Academy of Sciences, 45 Prospect Nauki, 252028 Kiev-28, Ukraine
Publisher
Institute of Physics, Polish Academy of Sciences
Subject
General Physics and Astronomy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Realism of the face lies in skin and eyes: Evidence from virtual and human agents;Computers in Human Behavior Reports;2021-01
2. Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001);Electronic Materials Letters;2016-05
3. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities;Applied Surface Science;2015-12
4. Anisotropy of Strain Relaxation in III-V Semiconductor Heterostructures;Defect and Diffusion Forum;2004-11
5. Misfit-Dislocation Induced Surface Morphology of InGaAs/GaAs Heterostructures;Microchimica Acta;2004-04-01
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