Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry-Reference-Cited by-同舟云学术

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Defect Structure of Pressure Treated Czochralski Grown Silicon Investigated by X-Ray Topography and Diffractometry

Published:1997-05 Issue:5 Volume:91 Page:987-991
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Misiuk A.¹,Härtwig J.²,Prieur E.²,Ohler M.²,Bąk-Misiuk J.³,Domagała J.³,Surma B.⁴

Affiliation:

1. Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warszawa, Poland

2. European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France

3. Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warszawa, Poland

4. Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warszawa, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Revealing the structural disturbances in Czochralski silicon by high temperature–pressure treatment;Journal of Alloys and Compounds;2005-09

2. Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon;Vacuum;2005-03

3. Oxygen Precipitation in Si:O Annealed under High Hydrostatic Pressure;Acta Physica Polonica A;2002-05

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