Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant-Reference-Cited by-同舟云学术

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Changes in the Activation Energy of Radiation Defects in Strongly Defected Silicon Depending on the Type and Concentration of Dopant

Published:2014-06 Issue:6 Volume:125 Page:1392-1396
ISSN:0587-4246
Container-title:Acta Physica Polonica A
language:en
Short-container-title:Acta Phys. Pol. A

Author:

Węgierek P.¹,Billewicz P.¹

Affiliation:

1. Lublin University of Technology, Nadbystrzycka 38A, 20-618 Lublin, Poland

Publisher

Institute of Physics, Polish Academy of Sciences

Subject

General Physics and Astronomy

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Application of Neon Ion Implantation to Generate Intermediate Energy Levels in the Band Gap of Boron-Doped Silicon as a Material for Photovoltaic Cells;Materials;2021-11-17

2. Influence of Substrate Type and Dose of Implanted Ions on the Electrical Parameters of Silicon in Terms of Improving the Efficiency of Photovoltaic Cells;Energies;2020-12-19

3. Test Station for Frequency-Domain Dielectric Spectroscopy of Nanocomposites and Semiconductors;Journal of Applied Spectroscopy;2015-09

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