Defect structures and dopant solution states of Hf‐doped Si <sub>3</sub> N <sub>4</sub> ceramics-Reference-Cited by-同舟云学术

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Defect structures and dopant solution states of Hf‐doped Si ₃ N ₄ ceramics

Published:2022-10-13 Issue:1 Volume:20 Page:190-196
ISSN:1546-542X
Container-title:International Journal of Applied Ceramic Technology
language:en
Short-container-title:Int J Applied Ceramic Tech

Author:

Kuwabara Akihide¹^ORCID,Gao Xiang¹²^ORCID,Riedel Ralf³^ORCID,Ionescu Emanuel³⁴^ORCID,Ikuhara Yuichi¹⁵^ORCID

Affiliation:

1. Nanostructures Research Laboratory Japan Fine Ceramics Center Nagoya Japan

2. Center for High Pressure Science and Technology Advanced Research Beijing China

3. Institut für Materialwissenschaft Technische Universität Darmstadt Darmstadt Germany

4. Fraunhofer Institution for Materials Recycling and Resource Strategies IWKS Alzenau Germany

5. Institute of Engineering Innovation School of Engineering The University of Tokyo Tokyo Japan

Publisher

Wiley

Subject

Materials Chemistry,Marketing,Condensed Matter Physics,Ceramics and Composites

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1111/ijac.14236

Reference30 articles.

1. Silicon Nitride and Related Materials

2. Mechanical properties of silicon nitride-based ceramics and its use in structural applications at high temperatures

3. Identification of crack path of inter- and transgranular fractures in sintered silicon nitride by in situ TEM

4. Micro scale fracture strength of grains and grain boundaries in polycrystalline La-doped β-Si3N4 ceramics

5. First‐principles study in an inter‐granular glassy film model of silicon nitride

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