Defects in GaSe grown by Bridgman method-Reference-Cited by-同舟云学术

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Defects in GaSe grown by Bridgman method

Published:2014-09-02 Issue:3 Volume:256 Page:208-212
ISSN:0022-2720
Container-title:Journal of Microscopy
language:en
Short-container-title:Journal of Microscopy

Author:

KOKH K.A.¹²³,ATUCHIN V.V.²⁴⁵,GAVRILOVA T.A.²⁴,KOZHUKHOV A.²⁴,MAXIMOVSKIY E.A.²⁶,POKROVSKY L.D.²⁴,TSYGANKOVA A.R.²⁶,SAPRYKIN A.I.²⁶

Affiliation:

1. Sobolev Institute of Geology and Mineralogy; SB RAS; Novosibirsk Russia

2. Novosibirsk State University; Novosibirsk Russia

3. Siberian Physical-Technical Institute of Tomsk State University, Tomsk; Russia

4. Rzhanov Institute of Semiconductor Physics; SB RAS; Novosibirsk Russia

5. Functional Electronics Laboratory; Tomsk State University; Tomsk Russia

6. Nikolaev Institute of Inorganic Chemistry; SB RAS; Novosibirsk Russia

Funder

Ministry of Education and Science of the Russian Federation

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jmi.12174/fullpdf

Reference45 articles.

1. Long-term relaxation effects in gallium monoselenide doped by holmium and gadolinium;Abdinov;Azerbaijan J. Phys.,2010

2. Thermal conductivity of GaS and GaSe layered semiconductors;Abdullaev;Phys. Solid State,2002

3. Growth and characterization of GaSe single crystal;Abdullah;J. Cryst. Growth,2010

4. The chemical exfoliation phenomena in layered GaSe-polyaniline composite;Aksimentyeva;Nanoscale Res. Lett.,2013

5. On a possibility to form small crystallites of layered gallium selenide via ultrasonic treatment;Allakhverdiev;Phys. Stat. Sol. A.,1997

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