Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties-Reference-Cited by-同舟云学术

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Inversion domain boundaries in Mn and Al dual-doped ZnO: Atomic structure and electronic properties

Published:2017-05-22 Issue:9 Volume:100 Page:4252-4262
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J Am Ceram Soc

Author:

Hoemke Joshua¹^ORCID,Tochigi Eita¹,Tohei Tetsuya¹,Yoshida Hidehiro²^ORCID,Shibata Naoya¹,Ikuhara Yuichi¹,Sakka Yoshio²

Affiliation:

1. Institute of Engineering Innovation; The University of Tokyo; Tokyo Japan

2. National Institute for Materials Science (NIMS); Tsukuba Ibaraki Japan

Funder

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.14931/fullpdf

Reference45 articles.

1. Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO;Sharma;Nat Mater,2003

2. Inversion boundaries and phonon scattering in Ga:ZnO thermoelectric compounds;Guilmeau;Inorg Chem,2017

3. Reduction of thermal conductivity in dually doped ZnO by design of three-dimensional stacking faults;Takemoto;RSC Adv,2014

4. Relation between thermoelectric properties and phase equilibria in the ZnO-In2O3 binary system;Liang;Acta Mater,2014

5. Remarkable enhancement in the Kapitza resistance and electron potential barrier of chemically modified In2O3(ZnO)9 natural superlattice interfaces;Liang;Phys Chem Chem Phys,2015

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