Effects of nitrogen pressure on properties of sintered reaction‐bonded silicon nitride

Author:

Nakashima Yuki1ORCID,Zhou You1ORCID,Tanabe Keisuke2,Arima Souhei2,Okuno Teruhisa2,Hirao Kiyoshi1ORCID,Ohji Tatsuki1ORCID,Fukushima Manabu1ORCID

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST) Nagoya Japan

2. Japan Fine Ceramics Co., Ltd. Sendai Japan

Abstract

AbstractWe prepared sintered reaction‐bonded silicon nitride ceramics by using yttria and magnesia as sintering additives and evaluated the effects of nitrogen pressure (0.1–1.0 MPa) on their microstructure, bending strength, fracture toughness, and thermal conductivity. The ratio of β phase in the nitrided compacts varied with the pressure and increased with increasing it. Since many β grains in the nitrided compacts were formed and interlocked each other with a stable three‐dimensional structure which restricted the shrinkage during the sintering procedure, many pores remained in the sintered body. Under the middle pressure (0.3–0.5 MPa), the grains grew large because the number of formed nuclei was small. On the other hand, under the high pressures (0.8–1.0 MPa), the grains were relatively fine and uniform because of a large number of nuclei. Since the porosity and grain length depended on the nitridation mechanism, which was affected by the nitrogen pressure, the properties largely varied accordingly. The nitridation at 0.1 MPa gave the best properties in this study.

Publisher

Wiley

Subject

Materials Chemistry,Marketing,Condensed Matter Physics,Ceramics and Composites

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3