Microwave Properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 Hetero Layered Films Directly Sputtered on Si up to 50 GHz
Author:
Affiliation:
1. Shanghai Institute of Ceramics; Chinese Academy of Sciences; 1295 Dingxi Road; Shanghai; 200050; China
2. IEMN-DOAE-MIMM Team; UMR CNRS 8520; Bat. P3; Cité scientifique; Villeneuve d'Ascq; 59655; Lille; France
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2011.04610.x/fullpdf
Reference19 articles.
1. Ferroelectric Materials for Microwave Tunable Applications;Tagantsev;J. Electroceram.,2003
2. Thin-Film Ferroelectric Microwave Devices;Lancaster;Supercond. Sci. Technol.,1998
3. Barium Strontium Titanate Thin Film Varactors for Room-temperature Microwave Device Applications;Bao;J. Phys. D: Appl. Phys.,2008
4. Microwave Dielectric Properties of Graded Barium Strontium Titanate Films;Cole;Appl. Phys. Lett.,2008
5. Investigations of Sol-gel-derived Highly (100)-oriented Ba0.5Sr0.5TiO3:MgO Composite Thin Films for Phase-shifter Applications;Jain;Appl. Phys. A: Mater. Sci. Process,2005
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