Oxidation Behavior of Chemically Vapor-Deposited Silicon Carbide
Author:
Publisher
Wiley
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.1987.tb00069.x/fullpdf
Reference25 articles.
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2. “Effects of Oxygen Partial Pressure on the Oxidation of Silicon Carbide,”;Jorgensen;J. Am. Ceram. Soc.,1960
3. Oxidation Behavior of Silicon Carbide,”;Ervin;J. Am. Ceram. Soc.,1958
4. “Oxidation of Silicon Carbide in the Temperature Range 1200° to 1500°C,”;Adamsky;J. Phys. Chem.,1959
5. “Temperature and Oxygen Pressure Dependence of Silicon Carbide Oxidation,”;Pultz;J. Phys. Chem.,1967
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