Microstructural Evolution of Silica on Single Crystal Silicon Carbide. Part II: Influence of Impurities and Defects
Author:
Publisher
Wiley
Subject
Materials Chemistry,Ceramics and Composites
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2009.03085.x/fullpdf
Reference36 articles.
1. 3 V. Presser and K. G. Nickel , “Silica on Silicon Carbide,” Crit. Rev. Solid State and Mater. Sci., 33 [1] 1-99 (2008).
2. 4 K. Christiansen and R. Helbig , “Anisotropic Oxidation of 6H-SiC,” J. Appl. Phys., 79 [6] 3276-81 (1996).
3. 5 J. N. Shenoy , M. K. Das , J. A. Cooper, Jr. , M. R. Melloch , and J. W. Palmour , “Effect of Substrate Orientation and Crystal Anisotropy on the Thermally Oxidized SiO2/SiC Interface,” J. Appl. Phys., 79 [6] 3042-5 (1996).
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