Influence of Thermal History on Crystal Nucleation in Silicon Carbide Amorphized with Neon Irradiation-Reference-Cited by-同舟云学术

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Influence of Thermal History on Crystal Nucleation in Silicon Carbide Amorphized with Neon Irradiation

Published:2004-06 Issue:6 Volume:87 Page:1146-1148
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:

Author:

Aihara Jun,Ishihara Masahiro,Hojou Kiichi,Furuno Shigemi

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/j.1551-2916.2004.01146.x/fullpdf

Reference16 articles.

1. Characterization of Vacancy-Type Defects and Phosphorus Donors Introduced in 6H-SiC by Ion Implantation;Ohshima;Appl. Phys. A.,1998

2. Ion Beam Processing of SiC for Optical Application;Wesch;Nucl. Instr. Methods Phys. Res. B.,1995

3. Ion Beam Irradiation of Relaxed Amorphous Silicon Carbide;Calcagno;Nucl. Instr. Methods Phys. Res. B.,1999

4. Helium Release and Microstructure of Neutron-Irradiated SiC Ceramics;Ssaki;J. Nucl. Mater.,1991

5. Xenon Diffusion Behaviour in Pyrolytic SiC;Fukuda;J. Mater. Sci.,1976

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