Dissociation of Basal Dislocations in 4H-SiC Single Crystals Deformed Around the Transition Temperature-Reference-Cited by-同舟云学术

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Dissociation of Basal Dislocations in 4H-SiC Single Crystals Deformed Around the Transition Temperature

Published:2013-06-14 Issue:9 Volume:96 Page:2921-2925
ISSN:0002-7820
Container-title:Journal of the American Ceramic Society
language:en
Short-container-title:J. Am. Ceram. Soc.

Author:

Castillo-Rodríguez Miguel¹,Lara Ana²,Muñoz Antonio²,Domínguez-Rodríguez Arturo²

Affiliation:

1. Instituto de Ciencia de Materiales de Sevilla; CSIC-Universidad de Sevilla; Avda. Américo Vespucio 49 Sevilla 41092 Spain

2. Departamento de Física de la Materia Condensada; Facultad de Física; Universidad de Sevilla; Apartado 1065 Sevilla 41080 Spain

Funder

Ministry of Education and Science

Publisher

Wiley

Subject

Materials Chemistry,Ceramics and Composites

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1111/jace.12434/fullpdf

Reference22 articles.

1. Cubic Polytype Inclusions in 4H-SiC;Iwata;J. Appl. Phys.,2003

2. The Relationship Between Activation Parameters and Dislocation Glide in 4H-SiC Single Crystals;Samant;Phys. Stat. Sol.,2000

3. Polytypic Transformations in SiC: The Role of TEM;Pirouz;Ultramicroscopy,1993

4. Activation Parameters for Dislocation Glide in α-SiC;Samant;Int. J. Refract. Metals. Hard. Met.,1998

5. On Temperature Dependence of Deformation Mechanism and the Brittle-Ductile Transition in Semiconductors;Pirouz;J. Mater. Res.,1999

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